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APT15F60B APT15F60S
600V, 16A, 0.43 Max, Trr 190nS
N-Channel FREDFET
POWER MOS 8(R) is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
TO -2 47
D3PAK
APT15F60B
APT15F60S
D
Single die FREDFET
G S
FEATURES
* Fast switching with low EMI * Low trr for high reliability * Ultra low Crss for improved noise immunity * Low gate charge * Avalanche energy rated * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full bridge * Half bridge * PFC and other boost converter * Buck converter * Single and two switch forward * Flyback
Absolute Maximum Ratings
Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive
1
Ratings 16 10 54 30 405 7
Unit
A
V mJ A
Thermal and Mechanical Characteristics
Symbol PD RJC RCS TJ,TSTG TL WT Characteristic Total Power Dissipation @ TC = 25C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) Package Weight 0.22 6.2 10 1.1 -55 0.15 150 300 Min Typ Max 290 0.43 Unit W C/W
C
5-2009 050-8172 Rev B
oz g in*lbf N*m
Torque
Mounting Torque ( TO-247 Package), 6-32 or M3 screw
Microsemi Website - http://www.microsemi.com
Static Characteristics
Symbol
VBR(DSS) VBR(DSS)/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS
TJ = 25C unless otherwise specified
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 250A VGS = 10V, ID = 6A VGS = VDS, ID = 1mA VDS = 400V VGS = 0V TJ = 25C TJ = 125C
APT15F60B_S
Typ 0.57 0.34 4 -10 Max Unit V V/C V mV/C A nA
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance
3
Min 600
Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current
2.5
0.43 5 100 500 100
VGS = 30V
Dynamic Characteristics
Symbol
gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf
4
TJ = 25C unless otherwise specified
Test Conditions
VDS = 50V, ID = 7A VGS = 0V, VDS = 25V f = 1MHz
Parameter
Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related
Min
Typ 14 2882 29 264 141
Max
Unit S
pF
VGS = 0V, VDS = 0V to 400V
5
Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time
VGS = 0 to 10V, ID = 7A, VDS = 300V Resistive Switching VDD = 400V, ID = 7A RG = 10 6 , VGG = 15V
73 72 15 30 16 19 49 15 nC
ns
Source-Drain Diode Characteristics
Symbol
IS ISM VSD trr Qrr Irrm dv/dt
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt
Test Conditions
MOSFET symbol showing the integral reverse p-n junction diode (body diode)
Min
D
Typ
Max 15
Unit
G S
A 54 1.0 190 354 V ns C A 20 V/ns
ISD = 7A, TJ = 25C, VGS = 0V TJ = 25C TJ = 125C ISD = 7A 3 diSD/dt = 100A/s VDD = 100V TJ = 25C TJ = 125C TJ = 25C TJ = 125C ISD 7A, di/dt 1000A/s, VDD = 400V, TJ = 125C
167 295 0.59 1.40 6.2 8.5
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25C, L = 16.4mH, RG = 25, IAS = 7A. 3 Pulse test: Pulse Width < 380s, duty cycle < 2%.
Rev B 5-2009
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -3.43E-8/VDS^2 + 1.44E-8/VDS + 5.38E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
050-8172
Typical Performance Curves
60 50 ID, DRAIN CURRENT (A) 40 30 20 10 0 TJ= 125C TJ= 25C ID, DRAIN CURRENT (A) TJ= 55C
V
GE
APT15F60B_S
25
T = 125C
J
= 10V
13 & 15V
20
15
6V
10 5.5V 5 5V 4.5V 35
TJ= 150C
0
5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 1, Output Characteristics
NORMALIZED TO VGS = 10V @ 7A
0
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 2, Output Characteristics
VDS> ID(ON) x RDS(ON) MAX.
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0
60 50 ID, DRAIN CURRENT (A) 40 30 20 10 0
250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
TJ= 55C TJ= 25C TJ= 125C
0
25
50
75
100
125
150
0
30 g fs, TRANSCONDUCTANCE 25 20 15 10 5 0
TJ, JUNCTION TEMPERATURE (C) FIGURE 3, RDS(ON) vs Junction Temperature
2 4 6 8 10 12 14 VGS , GATE-TO-SOURCE VOLTAGE (V) FIGURE 4, Transfer Characteristics Ciss
10,000
TJ = -55C TJ = 25C
TJ = 125C
C, CAPACITANCE (pF)
1,000
100
Coss
10
Crss
0
2
4
6
8
10
12
14
16
0
0
100
200
300
400
500
600
ID, DRAIN CURRENT (A) FIGURE 5, Gain vs Drain Current VGS, GATE-TOSOURCE VOLTAGE (V) 14
ID = 7A
VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 6, CAPACITANCE VS DRAIN-TO-SOURCE VOLTAGE 60 ISD, REVERSE DRAIN CURRENT (A) 50 40 30 20
TJ = 150C
VDS = 120V VDS = 300V
12 10 8 6 4 2 0
VDS = 480V
VSD, SOURCE-TO-DRAIN VOLTAGE (V) FIGURE 8, Reverse Drain Current vs Source-to-Drain Voltage
050-8172
10 20 30 40 50 60 70 80 90 100 Qg, TOTAL GATE CHARGE (nC) FIGURE 7, Gate Charge vs Gate-to-Source Voltage
0
0
0
0.5
1
1.5
2
Rev B
10
5-2009
TJ = 25C
1000
APT15F60B_S
TJ = 125C TC = 75C
1000
TJ = 150C TC = 25C
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
100
100
IDM 13s
10
IDM
13s
100s 1ms 10ms Rds(on) 100ms DC line
10
100s
1
Rds(on)
1ms 10ms 100ms DC line
1
Scaling for Different Case & Junction Temperatures: ID = ID(T = 25C)*(TJ - TC)/125
0.1
1
10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area
0.1
C
10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area
1
0.45 ZJC, THERMAL IMPEDANCE (C/W) 0.50 0.35 0.40 0.25 0.30 0.15 0.20 0.05 0 10-5 0.1 0.05 10
-4
D = 0.9 0.7
0.5
Note:
PDM
0.3
t1 t2
t1 = Pulse Duration
SINGLE PULSE 10 -3 10 -2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10 -1
1.0
RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
TO-247 (B) Package Outline
e3 100% Sn Plated
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
D3PAK Package Outline
Drain (Heat Sink)
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 13.41 (.528) 13.51(.532)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
1.04 (.041) 1.15(.045)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
Rev B 5-2009
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
Gate Drain Source
Heat Sink (Drain) and Leads are Plated
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Source Drain Gate Dimensions in Millimeters (Inches)
050-8172
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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